SGP20N60HS_09 Datasheet, PDF (7/12 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

2,0m J
*) E _on include losses
due to diode recovery
1,0m J
SGP20N60HS
SGW20N60HS
*) Eon include losses
E _ts*
due to diode recovery
E _on*
1,0 mJ
E _off
0,5 mJ
E _ts *
E_on*
E _off
0,0m J
0A
10A
20A
30A
40A
I_C, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T_J=150°C,
V_CE=400V, V_GE=0/15V, R_G=16Ω,
Dynamic test circuit in Figure E)
0,0 mJ
0Ω
10Ω
20Ω
30Ω
40Ω
R_G, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T_J=150°C,
V_CE=400V, V_GE=0/15V, I_C=20A,
Dynamic test circuit in Figure E)
*) E_on include losses
due to diode recovery
0,75mJ
E_ts*
0,50mJ
E_on*
0,25mJ ^Eoff
0,00mJ
0°C
50°C
100°C
150°C
T_J, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, V_CE=400V,
VGE=0/15V, I_C=20A, R_G=16Ω,
Dynamic test circuit in Figure E)
10⁰K/W
D=0.5
0.2
10^-1K/W _0.1
0.05
0.02
10^-2K/W
0.01
10^-3K/W
single pulse
R,(K/W)
0.1882
0.3214
0.1512
0.0392
τ, (s)
0.1137
2.24*10^-2
7.86*10^-4
9.41*10^-5
R1
R2
C1=τ1/R1 C2=τ2/R2
10^-4K/W
1µs 10µs 100µs 1ms 10ms 100ms
t_P, PULSE WIDTH
Figure 16. IGBT transient thermal resistance
(D = t_p / T)
Power Semiconductors
7
Rev 2.5 Nov 09