SGP20N60HS_09 Datasheet, PDF (3/12 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

SGP20N60HS
SGW20N60HS
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=25°C,
V_CC=400V,I_C=20A,
V_GE=0/15V,
R_G=16Ω
L_σ¹⁾ =60nH,
C_σ¹⁾ =40pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
18
15
207
13
0.39
0.30
0.69
Unit
max.
ns
mJ
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=150°C
V_CC=400V,I_C=20A,
V_GE=0/15V,
R_G= 2.2Ω
L_σ¹⁾ =60nH,
C_σ¹⁾ =40pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=150°C
V_CC=400V,I_C=20A,
V_GE=0/15V,
R_G= 16Ω
L_σ¹⁾ =60nH,
C_σ¹⁾ =40pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
15
8.5
65
35
0.46
0.24
0.7
17
13
222
13
0.6
0.36
0.96
Unit
max.
ns
mJ
ns
mJ
1) _{Leakage inductance Lσ an d Stray capacity C σ due to test circuit in Figure E.}
Power Semiconductors
3
Rev 2.5 Nov 09