SGP15N60 Datasheet, PDF (7/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology

SGP15N60, SGB15N60
SGW15N60
1.8mJ
*) Eon and Ets include losses
E_ts*
1.6mJ due to diode recovery.
1.4mJ
1.2mJ
1.0mJ
E_on*
0.8mJ
E_off
0.6mJ
0.4mJ
0.2mJ
0.0mJ
0A 5A 10A 15A 20A 25A 30A 35A
I_C, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T_j = 150°C, V_CE = 400V,
V_GE = 0/+15V, R_G = 2 1 Ω,
Dynamic test circuit in Figure E)
1.4mJ
*) Eon and Ets include losses
due to diode recovery.
E_ts*
1.2mJ
1.0mJ
0.8mJ
0.6mJ
E_off
E_on*
0.4mJ
0.2mJ
0.0mJ
0Ω
20Ω
40Ω
60Ω
80Ω
R_G, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T_j = 150°C, V_CE = 400V,
V_GE = 0/+15V, I_C = 15A,
Dynamic test circuit in Figure E)
1.0mJ
*) Eon and Ets include losses
due to diode recovery.
E_ts*
0.8mJ
0.6mJ
0.4mJ
E_on*
E_off
0.2mJ
0.0mJ
0°C
50°C
100°C
150°C
T_j, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V_CE = 400V, V_GE = 0/+15V,
I_C = 15A, R_G = 2 1Ω,
Dynamic test circuit in Figure E)
10⁰K/W
D=0.5
0.2
10^-1K/W ^0.1
0.05
0.02
10^-2K/W
0.01
10^-3K/W
single pulse
R,(1/W)
0.5321
0.2047
0.1304
0.0027
τ, (s)=
0.04968
2.58*10^-3
2.54*10^-4
3.06*10^-4
R1
R2
C1=τ1/R1 C2=τ2/R2
10^-4K/W
1µs 10µs 100µs 1ms 10ms 100ms 1s
t_p, PULSE WIDTH
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t_p / T)
7
Jul-02