SGP15N60 Datasheet, PDF (3/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology

SGP15N60, SGB15N60
SGW15N60
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=25°C,
V_CC=400V,I_C=15A,
V_GE=0/15V,
R_G=21Ω,
L_σ¹⁾ =180nH,
C_σ¹⁾ =250pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
32
23
234
46
0.30
0.27
0.57
Unit
max.
38 ns
28
281
55
0.36 mJ
0.35
0.71
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=150°C
V_CC=400V,I_C=15A,
L_σ¹⁾=180nH,
C_σ¹⁾=250pF
V_GE=0/15V,
R_G=21Ω
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
31
23
261
54
0.45
0.41
0.86
Unit
max.
38 ns
28
313
65
0.54 mJ
0.53
1.07
1) _{Leakage inductance L σ an d Stray capacity Cσ due to dynamic test circuit in Figure E.}
3
Jul-02