SGP10N60A Datasheet, PDF (7/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology

SGP10N60A, SGB10N60A
SGW10N60A
1 ,6 m J
1 ,4 m J
*) Eon and Ets include losses
due to diode recovery.
1 ,2 m J
E*
ts
1 ,0 m J
0 ,8 m J
0 ,6 m J
0 ,4 m J
E_on*
E _off
0 ,2 m J
0 ,0 m J
0A
5A 10A 15A 20A 25A
I_C, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T_j = 150°C, V_CE = 400V,
V_GE = 0/+15V, R_G = 2 5 Ω,
Dynamic test circuit in Figure E)
1,0m J
*) Eon and Ets include losses
due to diode recovery.
0,8m J
E _ts*
0,6m J
0,4m J
E _off
E_on*
0,2m J
0Ω
20Ω
40Ω
60Ω
80Ω
R_G, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T_j = 150°C, V_CE = 400V,
V_GE = 0/+15V, I_C = 10A,
Dynamic test circuit in Figure E)
0,8mJ
*) Eon and Ets include losses
due to diode recovery.
0,6mJ
0,4mJ
E_ts*
0,2mJ
E_off
E_on*
0,0mJ
0°C
50°C
100°C
150°C
T_j, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V_CE = 400V, V_GE = 0/+15V,
I_C = 10A, R_G = 2 5Ω,
Dynamic test circuit in Figure E)
10⁰K/W
D=0.5
0.2
10^-1K/W
0.1
0.05
0.02
10^-2K/W ^0.01
R,(K/W)
0.4287
0.4830
0.4383
τ, (s)
0.0358
4.3*10^-3
3.46*10^-4
R1
R2
single pulse
C1=τ1/R1 C2=τ2/R2
10^-3K/W
1µs 10µs 100µs 1ms 10ms 100ms 1s
t_p, PULSE WIDTH
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t_p / T)
7
Jul-02