SGP10N60A Datasheet, PDF (3/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology

SGP10N60A, SGB10N60A
SGW10N60A
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=25°C,
V_CC=400V,I_C=10A,
V_GE=0/15V,
R_G=25Ω,
L_σ¹⁾ =180nH,
C_σ¹⁾ =55pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
Unit
max.
28
12
178
24
0.15
0.17
0.320
34 ns
15
214
29
0.173 mJ
0.221
0.394
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=150°C
V_CC=400V,I_C=10A,
V_GE=0/15V,
R_G=25Ω
L_σ¹⁾ =180nH,
C_σ¹⁾ =55pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
Unit
max.
28
12
198
26
0.260
0.280
0.540
34 ns
15
238
32
0.299 mJ
0.364
0.663
1) _{Leakage inductance L σ an d Stray capacity Cσ due to dynamic test circuit in Figure E.}
3
Jul-02