PXAC260602FC_16 Datasheet, PDF (7/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz

PXAC260602FC
Package Outline Specifications
2X 4.83±0.51
[.190±0.020]
2X 45° X 2.72
[45° X .107]
Package H-37248-4
(8.89
[.350])
CL
(5.08
[.200])
D1
D2
4X R0.76+-00.3.183
[
R.030
+0.005
-0.015
]
FLANGE 9.78
[.385]
LID 9.40
[.370]
19.43±0.51
CL
[.765±0.020]
G1
G2
SPH 1.57
[.062]
2X 12.70
[.500]
19.81±0.20
[.780±0.008]
4X 3.81
[.150]
1.02
[.040]
0.0381 [.0015] -A-
H-37248-4_po_02_01-09-2013
3.76±0.25
[.148±0.010]
CL

S
20.57
[.810]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D1, D2 – drains; G1, G2 – gates; S – source.
5. Lead thickness: 0.10 + 0.076/–0.025 mm [0.004+0.003/–0.001 inch].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
7 of 8
Rev. 02.4, 2016-06-22