PXAC260602FC_16 Datasheet, PDF (6/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz

PXAC260602FC
Reference Circuit (cont.)
Reference Circuit Assembly
DUT
PXAC260602FC V1
Test Fixture Part No. LTA/PXAC260602FC V1
PCB
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, ε_r = 3.66, ƒ = 2620 – 2690 MHz
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
Components Information
Component
Description
Input
C101, C103, C106, Capacitor, 18 pF
C108
C102, C104
Capacitor, 10 μF
C105, C107
Capacitor, 10 μF
R101, R103
Resistor, 10 Ω
R102
Resistor, 50 Ω
R104
Resistor, 20 Ω
S1
Directional Coupler, 5dB
Suggested Manufacturer
ATC
Panasonic Electronic Components
Taiyo Yuden
Panasonic Electronic Components
Anaren
Panasonic Electronic Components
Anaren
P/N
ATC800A180JT250T
EEE-HB1H100AP
UMK325C7106MM-T
ERJ-3GEYJ100V
C16A5024
ERJ-8GEYJ200V
X3C25P1-05S
Output
C201, C202, C204,
C208
C203, C207
C205, C206
Capacitor, 18 pF
Capacitor, 100 μF
Capacitor, 10 μF
ATC
Panasonic Electronic Components
Taiyo Yuden
ATC800A180JT250T
EEE-FP1V101AP
UMK325C7106MM-T
Pinout Diagram (top view)
Peak
Main ^S
D1
D2
G1
G2
H-37248-4__do_pd_10-10-2012
Lead connections for PXAC260602FC
Pin Description
D1
Drain device 1 (Peak)
D2
Drain device 2 (Main)
G1
Gate device 1 (Peak)
G2
Gate device 2 (Main)
S
Source (flange)
Data Sheet
6 of 8
Rev. 02.4, 2016-06-22