IPL60R255P6 Datasheet, PDF (7/15 Pages) Infineon Technologies AG – Increased MOSFET dv/dt ruggedness

600VCoolMOS™P6PowerTransistor
IPL60R255P6
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
282 -
3.4 -
24 -
Unit Note/TestCondition
V VGS=0V,IF=8A,Tj=25°C
ns
VR=400V,IF=8A,diF/dt=100A/µs;
see table 8
µC
VR=400V,IF=8A,diF/dt=100A/µs;
see table 8
A
VR=400V,IF=8A,diF/dt=100A/µs;
see table 8
Final Data Sheet
7
Rev.2.0,2014-05-16