IPL60R255P6 Datasheet, PDF (4/15 Pages) Infineon Technologies AG – Increased MOSFET dv/dt ruggedness

600VCoolMOS™P6PowerTransistor
IPL60R255P6
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current¹⁾
Pulsed drain current²⁾
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
Storage temperature
Operating junction temperature
Continuous diode forward current
Diode pulse current²⁾
Reverse diode dv/dt³⁾
ID
ID,pulse
EAS
EAR
IAR
dv/dt
VGS
VGS
Ptot
Tstg
Tj
IS
IS,pulse
dv/dt
Maximum diode commutation speed dif/dt
Min.
-
-
-
-
-
-
-
-20
-30
-
-40
-40
-
-
-
-
Values
Typ. Max.
-
15.9
-
10.1
-
43
-
352
-
0.53
-
2.8
-
100
-
20
-
30
-
126
-
150
-
150
-
13.8
-
43
-
15
-
500
Unit Note/TestCondition
A
TC=25°C
TC=100°C
A TC=25°C
mJ ID=2.8A; VDD=50V; see table 10
mJ ID=2.8A; VDD=50V; see table 10
A-
V/ns VDS=0...400V
V static;
V AC (f>1 Hz)
W TC=25°C
°C -
°C -
A TC=25°C
A TC=25°C
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
1) _{Limited by Tj max. Maximum duty cycle D=0.75}
2) _{Pulse width tp limited by Tj,max}
3)_{IdenticallowsideandhighsideswitchwithidenticalRG}
Final Data Sheet
4
Rev.2.0,2014-05-16