IPD90N04S3-H4 Datasheet, PDF (7/9 Pages) Infineon Technologies AG – OptiMOS-T Power-Transistor

IPD90N04S3-H4
13 Typical avalanche energy
E _AS = f(T _j)
parameter: I _D
700
14 Typ. drain-source breakdown voltage
V _BR(DSS) = f(T _j); I _D = 1 mA
55
600
50
500
22.5 A
45
400
300
40
45 A
200
35
90 A
100
0
25
75
125
T _j [°C]
15 Typ. gate charge
V _GS = f(Q _gate); I _D = 90 A pulsed
parameter: V _DD
12
10
8V
30
175
-60 -20
20
60 100 140 180
T _j [°C]
16 Gate charge waveforms
V _GS
32 V
Q_g
8
6
V _{g s(th)}
4
2
0
0
Rev. 1.0
10
20
30
40
50
Q _gate [nC]
Q _{g (th)}
Q _gs
page 7
Q _sw
Q _gd
Q _gate
2008-08-01