IPD90N04S3-H4 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-T Power-Transistor

OptiMOS^®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPD90N04S3-H4
Product Summary
V _DS
R _DS(on),max
I_D
40 V
4.3 mΩ
90 A
PG-TO252-3-11
Type
IPD90N04S3-H4
Package
Marking
PG-TO252-3-11 QN04H4
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current¹⁾
I_D
T _C=25 °C, V _GS=10 V
T _C=100 °C,
V _GS=10 V²⁾
Pulsed drain current²⁾
Avalanche energy, single pulse²⁾
I _D,pulse
E _AS
T _C=25 °C
I _D=45 A
Avalanche current, single pulse
I _AS
-
Gate source voltage
V _GS
-
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
Unit
90
A
90
360
330
mJ
90
A
±20
V
115
W
-55 ... +175
°C
55/175/56
Rev. 1.0
page 1
2008-08-01