IPD50N04S3-09 Datasheet, PDF (7/9 Pages) Infineon Technologies AG – OptiMOS-T Power-Transistor

IPD50N04S3-09
13 Typical avalanche energy
E _AS = f(T _j)
parameter: I _D
300
250
12.5 A
200
150
25 A
100
50 A
50
14 Typ. drain-source breakdown voltage
V _BR(DSS) = f(T _j); I _D = 1 mA
55
50
45
40
35
0
30
25
75
125
175
-60 -20
20
60 100 140 180
T _j [°C]
T _j [°C]
15 Typ. gate charge
V _GS = f(Q _gate); I _D = 50 A pulsed
parameter: V _DD
12
10
16 Gate charge waveforms
V _GS
8 V 32 V
Q_g
8
6
V _{g s(th)}
4
2
0
0
Rev. 1.1
10
20
Q _gate [nC]
Q _{g (th)}
Q _gs
30
page 7
Q _sw
Q _gd
Q _gate
2009-11-03