IPD50N04S3-09 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-T Power-Transistor

OptiMOS^®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
IPD50N04S3-09
Product Summary
V _DS
R _DS(on),max
I_D
40 V
9 mΩ
50 A
PG-TO252-3-11
Type
IPD50N04S3-09
Package
Marking
PG-TO252-3-11 3N0409
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I_D
T _C=25 °C, V _GS=10 V¹⁾
T _C=100 °C,
V _GS=10 V²⁾
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse²⁾
E _AS
I _D=25 A
Avalanche current, single pulse
I _AS
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Rev. 1.1
page 1
Value
Unit
50
A
43
200
140
mJ
50
A
±20
V
63
W
-55 ... +175
°C
55/175/56
2009-11-03