IPD031N03LG Datasheet, PDF (7/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

13 Avalanche characteristics
I _AS=f(t _AV); R _GS=25 Ω
parameter: T _j(start)
100
25 °C
100 °C
150 °C
14 Typ. gate charge
V _GS=f(Q _gate); I _D=30 A pulsed
parameter: V _DD
12
10
8
IPD031N03L G
IPS031N03L G
15 V
6V
24 V
10
6
4
2
1
10^-1
10⁰
10¹
10²
t _AV [µs]
15 Drain-source breakdown voltage
V _BR(DSS)=f(T _j); I _D=1 mA
0
10³
0
10
20
30
40
50
60
Q _gate [nC]
16 Gate charge waveforms
34
V _GS
32
30
28
26
V _{g s(th)}
24
22
Q _g(th)
20
-60
-20
20
60 100 140 180
T _j [°C]
Q _gs
Rev. 2.1
page 7
Q_g
Q _sw
Q _gd
Q _gate
2010-04-07