IPD031N03LG Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

Type
OptiMOS^™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC¹⁾ for target applications
• N-channel, logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21 *
•^TP^ypb-^efree plating; RoIPHDS0c3o1mNp0l3iaLntG
IPS031N03L G
Product Summary
V _DS
R _DS(on),max
I_D
IPD031N03L G
IPS031N03L G
30 V
3.1 mΩ
90 A
Package
Marking
PG-TO252-3
031N03L
PG-TO251-3-11
031N03L
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
V _GS=4.5 V, T _C=25 °C
Pulsed drain current²⁾
I _D,pulse
V _GS=4.5 V,
T _C=100 °C
T _C=25 °C
Avalanche current, single pulse³⁾
I _AS
T _C=25 °C
Avalanche energy, single pulse
E _AS
I _D=90 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=90 A, V _DS=24 V,
di /dt =200 A/µs,
T _j,max=175 °C
Gate source voltage
V _GS
1) _{J-STD20 and JESD22}
* IPD031N03L G HF available with SP000680554 only in Malacca, Malaysia
IPS031N03L G available in HF
Rev. 2.1
page 1
Value
90
90
90
79
400
90
60
6
±20
Unit
A
mJ
kV/µs
V
2010-04-07