IPB240N04S4-1R0 Datasheet, PDF (7/9 Pages) Infineon Technologies AG – N-channel - Enhancement mode

IPB240N04S4-1R0
13 Typical avalanche energy
E _AS = f(T _j)
parameter: I _D
1750
14 Drain-source breakdown voltage
V _BR(DSS) = f(T _j); I _D = 1 mA
44
1500
60 A
1250
42
1000
750
120 A
40
500 ^{190 A}
250
0
25
75
125
T _j [°C]
15 Typ. gate charge
V _GS = f(Q _gate); I _D = 180 A pulsed
parameter: V _DD
10
9
8V
8
7
6
5
4
3
2
1
0
0
40
80
120
Q _gate [nC]
38
175
-60 -20
20
60 100 140 180
T _j [°C]
16 Gate charge waveforms
V _GS
32 V
Q_g
160
Q _gs
Q _gd
Q gate
Rev. 1.0
page 7
2013-08-22