IPB240N04S4-1R0 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – N-channel - Enhancement mode

IPB240N04S4-1R0
OptiMOS^™-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
V _DS
R _DS(on)
I_D
40 V
1.0 mW
240 A
PG-TO263-7-3
Type
IPB240N04S4-1R0
Package
PG-TO263-7-3
Marking
4N041R0
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I_D
T _C=25°C, V _GS=10V¹⁾
T _C=100 °C,
V _GS=10 V²⁾
Pulsed drain current²⁾
I _D,pulse T _C=25 °C
Avalanche energy, single pulse²⁾
E _AS
I _D=120 A
Avalanche current, single pulse
I _AS
-
Gate source voltage
V _GS
-
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
Unit
240
A
240
960
750
mJ
190
A
±20
V
231
W
-55 ... +175
°C
55/175/56
Rev. 1.0
page 1
2013-08-22