IPB081N06L3G Datasheet, PDF (7/10 Pages) Infineon Technologies AG – OptiMosTM3 Power-Transistor

13 Avalanche characteristics
I _6I4S"t _6K R _=I   "
A2 C2 > 6E6C T _{W"`aN_a#</sub>
100
  U
  U
  U
10
IPB081N06L3 G IPP084N06L3 G
14 Typ. gate charge
V <sub>=I</sub>4S"Q <sub>TNaR</sub> I <sub>9</sub>    AF=D65
A2 C2 > 6E6C V <sub>99</sub>
10
8
 /
 /
 /
6
4
2
1
0.1
1
10
100
t <sub>AV</sub> [µs]
15 Drain-source breakdown voltage
V <sub>7H"9II#</sub>4S"T <sub>W</sub> I <sub>9</sub> > 
1000
0
0
10
20
30
40
50
Q <sub>gate</sub> [nC]
16 Gate charge waveforms
70
V <sub>=I</sub>
Q<sub>g</sub>
65
60
V <sub>T `"aU#}
55
Q _T"aU#
50
-60
-20
20
60
100 140 180
T _j [°C]
Q _{T`</sub>
, 6G   
A2 86 
Q <sub>`d}
Q _TQ
Q _gate