IPB081N06L3G Datasheet, PDF (5/10 Pages) Infineon Technologies AG – OptiMosTM3 Power-Transistor

IPB081N06L3 G IPP084N06L3 G
5 Typ. output characteristics
I ₉4S"V _9I T _W   U
A2 C2 > 6E6C V _=I
200
180
/
 / _{ /}
/
160
140
120
  /
100
80
/
60
40
  /
20
/
0
0
1
2
3
4
V _DS [V]
7 Typ. transfer characteristics
I ₉4S"V _=I LV _9Ih5*hI ₉hR _9I"\[#ZNe
A2 C2 > 6E6C T _W
120
6 Typ. drain-source on resistance
R _9I"\[#4S"I ₉ T _W   U
A2 C2 > 6E6C V _=I
17
16
  /
/
  /
/
15
14
13
12
11
10
9
/
8
/
7
 /
6
5
5
0
50
100
150
200
I _D [A]
8 Typ. forward transconductance
g _S`4S"I ₉ T _W   U
100
100
80
60
40
20
0
0
, 6G   
  U
  U
2
4
V _GS [V]
80
60
40
20
0
6
0
A2 86 
50
100
I _D [A]
150