IPB050N06NG Datasheet, PDF (7/10 Pages) Infineon Technologies AG – OptiMOS® Power-Transistor

13 Avalanche characteristics
I _AS=f(t _AV); R _GS=25 Ω
parameter: T _j(start)
10³
10²
25 °C
100 °C
150 °C
10¹
IPP050N06N G
14 Typ. gate charge
V _GS=f(Q _gate); I _D=100 A pulsed
parameter: V _DD
12
IPB050N06N G
30 V
10
12V
48 V
8
6
4
10⁰
10⁰
10¹
10²
t _AV [µs]
15 Drain-source breakdown voltage
V _BR(DSS)=f(T _j); I _D=1 mA
2
0
10³
0
40
80
120
160
Q _gate [nC]
16 Gate charge waveforms
75
V _GS
Q_g
70
65
60
V _{g s(th)}
55
50
-60 -20 20
60 100 140 180
T _j [°C]
Q _{g (th)}
Q _gs
Rev. 1.11
page 7
Q _sw
Q _gd
Q _gate
2006-07-06