IPB050N06NG Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS® Power-Transistor

OptiMOS^® Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
IPP050N06N G IPB050N06N G
Product Summary
V _DS
R _{DS(on),max SMDversion}
I_D
60 V
4.7 mΩ
100 A
Type
IPP050N06L
IPB050N06L
Package
Marking
P-TO220-3-1
050N06L
P-TO263-3-2
050N06L
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C¹⁾
Pulsed drain current
I _D,pulse
T _C=100 °C
T _C=25 °C²⁾
Avalanche energy, single pulse
E _AS
I _D=100 A, R _GS=25 Ω
Reverse diode dv /dt
dv /dt
I _D=100 A, V _DS=48 V,
di /dt =200 A/µs,
T _j,max=175 °C
Gate source voltage
V _GS
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1) _{Current is limited by bondwire; with an RthJC=0.5 the chip is able to carry 160A}
2) _{See figure 3}
Rev. 1.11
page 1
Value
100
100
400
810
6
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2006-07-06