IKP15N60T_07 Datasheet, PDF (7/14 Pages) Infineon Technologies AG – Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

TrenchStop^® Series
IKP15N60T
q
1.6m J
*) E_on and E_tsinclude losses
due to diode recovery
1.2m J
0.8m J
0.4m J
E _ts*
E _off
E _on*
0.0m J
0A
5A 10A 15A 20A 25A
I_C, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T_J = 175°C,
V_CE = 400V, V_GE = 0/15V, R_G = 15Ω,
Dynamic test circuit in Figure E)
1.6 mJ ^{*) E}on ^{and E}ts ^{include losses}
due to diode recovery
1.4 mJ
E*
ts
1.2 mJ
1.0 mJ
0.8 mJ
0.6 mJ
E_off
0.4 mJ
E_on*
0.2 mJ
0Ω 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω 80Ω
R_G, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T_J = 175°C,
V_CE = 400V, V_GE = 0/15V, I_C = 15A,
Dynamic test circuit in Figure E)
0.9mJ
0.8mJ
*) E_on and E_ts include losses
due to diode recovery
0.7mJ
E_ts*
0.6mJ
0.5mJ
0.4mJ E_off
0.3mJ
E _on*
0.2mJ
25°C 50°C
75°C 100°C 125°C 150°C
T_J, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, V_CE = 400V,
V_GE = 0/15V, I_C = 15A, R_G = 15Ω,
Dynamic test circuit in Figure E)
1.2m J
1 .0 m J
*) E_on and E_ts include losses
due to diode recovery
0 .8 m J
E_ts*
0 .6 m J
E _off
0 .4 m J
0 .2 m J
E_on*
0 .0 m J
300V
350V
400V
450V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, T_J = 175°C,
V_GE = 0/15V, I_C = 15A, R_G = 15Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.2 Sep. 07