IKP15N60T_07 Datasheet, PDF (6/14 Pages) Infineon Technologies AG – Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology

TrenchStop^® Series
IKP15N60T
q
100ns
10ns
t_d(on)
t_d(off)
t_f
t_r
1ns
0A
5A 10A 15A 20A 25A
Figure 9.
I_C, COLLECTOR CURRENT
Typical switching times as a
function of collector current
(inductive load, T_J=175°C,
V_CE = 400V, V_GE = 0/15V, R_G = 15Ω,
Dynamic test circuit in Figure E)
t_d(off)
100ns
t_f
t_d(on)
t_r
10ns
10Ω
20Ω
30Ω
40Ω
50Ω
R_G, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T_J = 175°C,
V_CE= 400V, V_GE = 0/15V, I_C = 15A,
Dynamic test circuit in Figure E)
100ns
t_d(off)
t_f
t_d(on)
10ns
t_r
25°C 50°C 75°C 100°C 125°C 150°C
T_J, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V_CE = 400V,
V_GE = 0/15V, I_C = 15A, R_G=15Ω,
Dynamic test circuit in Figure E)
7V
6V
max.
typ.
5V
4V min.
3V
2V
1V
0V
-50°C
0°C
50°C 100°C 150°C
T_J, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(I_C = 0.21mA)
Power Semiconductors
6
Rev. 2.2 Sep. 07