BSS126_09 Datasheet, PDF (7/9 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

13 Forward characteristics of reverse diode
I _F=f(V _SD)
parameter: T _j
0.1
150 °C
25 °C
BSS126
15 Typ. gate charge
V _GS=f(Q _gate); I _D=0.1 A pulsed
parameter: V _DD
6
0.2 VDS(max) 0.5 VDS(max)
5
4
150 °C, 98%
3
0.8 VDS(max)
25 °C, 98%
2
0.01
1
0
-1
-2
-3
0.001
-4
0
0.5
1
1.5
2
2.5
0
V _SD [V]
0.4
0.8
1.2
1.6
Q _gate [nC]
16 Drain-source breakdown voltage
I _D=f(V _GS); V _DS=3 V; T _j=25 °C
700
660
620
580
540
500
-60 -20
20
60 100 140 180
T _j [°C]
Rev. 1.6
page 7
2009-08-18