BSS126_09 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

SIPMOS^® Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with V_GS(th) indicator on reel
• Pb-free lead plating; RoHS compliant
Product Summary
V _DS
R _DS(on),max
I _DSS,min
BSS126
600 V
700 Ω
0.007 A
PG-SOT-23
Type
BSS126
BSS126
Package Pb-free
PG-SOT-23 Yes
PG-SOT-23 Yes
Tape and Reel Information
L6327: 3000 pcs/reel
L6906: 3000 pcs/reel sorted in V _GS(th) bands¹⁾
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD class
(JESD22-A114-HBM)
I_D
I _D,pulse
dv /dt
V _GS
T _A=25 °C
T _A=70 °C
T _A=25 °C
I _D=0.016 A,
V _DS=20 V,
di /dt =200 A/µs,
T _j,max=150 °C
0.021
0.017
0.085
6
±20
0 (<250V)
Power dissipation
P _tot
T _A=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
0.50
-55 ... 150
55/150/56
Marking
SHs
SHs
Unit
A
kV/µs
V
W
°C
1) _{see table on next page and diagram 11}
Rev. 1.6
page 1
2009-08-18