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BSC440N10NS3G Datasheet, PDF (7/10 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
10
25 °C
100 °C
125 °C
14 Typ. gate charge
V GS=f(Q gate); I D=6 A pulsed
parameter: V DD
10
BSC440N10NS3 G
80 V
8
50 V
6
20 V
4
2
1
0
0.1
1
10
100
1000
0
2
4
6
8
tAV [µs]
Qgate [nC]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
110
V GS
Qg
105
100
V gs(th)
95
90
-60 -20
20
60 100 140 180
Tj [°C]
Q g(th)
Q gs
Rev. 2.4
page 7
Q sw
Q gd
Q gate
2009-10-30
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