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BSC440N10NS3G Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor | |||
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OptiMOSTM3 Power-Transistor
Features
⢠Very low gate charge for high frequency applications
⢠Optimized for dc-dc conversion
⢠N-channel, normal level
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Very low on-resistance R DS(on)
⢠150 °C operating temperature
⢠Pb-free lead plating; RoHS compliant
⢠Qualified according to JEDEC1) for target application
⢠Halogen-free according to IEC61249-2-21
BSC440N10NS3 G
Product Summary
VDS
RDS(on),max
ID
100 V
44 mW
18 A
PG-TDSON-8
Type
BSC440N10NS3 G
Package
PG-TDSON-8
Marking
440N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=50 K/W2)
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=12 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
18
A
11
5.3
72
18
mJ
±20
V
29
W
-55 ... 150
°C
55/150/56
Rev. 2.4
page 1
2009-10-30
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