BSC0924NDI Datasheet, PDF (7/14 Pages) Infineon Technologies AG – Dual N-Channel OptiMOS™ MOSFET

9 Typ. output characteristics (Q1)
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
160
120
10 V 4.5 V
4V
80
3.5 V
3.3 V
BSC0924NDI
10 Typ. output characteristics (Q2)
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
400
300
10 V
4.5 V
4V
200
3.5 V
3V
40
100
3.3 V
2.8 V
3V
2.8 V
0
0
0
1
2
3
0
1
2
3
V_DS [V]
V_DS [V]
11 Typ. drain-source on resistance (Q1)
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
12 Typ. drain-source on resistance (Q2)
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
15
10
12
3V
9
6
3
3.3 V
3.5 V
3V
8
3.3 V
6
4V
4.5 V
4
5V
10 V
2
3.5 V
4V
4.5 V
5V
10 V
0
0
Rev.2.0
20
40
60
I_D [A]
0
80
0
page 7
20
40
60
80
I_D [A]
2013-07-30