BSC0924NDI Datasheet, PDF (2/14 Pages) Infineon Technologies AG – Dual N-Channel OptiMOS™ MOSFET

BSC0924NDI
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction -
Q1 R _thJC
-
case
Q2
-
Thermal resistance, junction -
ambient¹⁾
Q1 R _thJA
Q2
6 cm² cooling area²⁾
-
Q1
minimal footprint,
Q2
steady state³⁾
-
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
-
4.2 K/W
-
3.4
-
50
-
125
Drain-source breakdown voltage Q1
V _(BR)DSS V _GS=0 V, I _D=10 mA
30
-
Q2
Breakdown voltage temperature ^{Q1 dV} (BR)DSS I _D=10 mA, referenced
coefficient
Q2 ^{/dT j}
to 25 °C
-
15
-V
- mV/K
Gate threshold voltage
Q1
V _GS(th) V _DS=V _GS, I _D=250 µA
1.2
-
Q2
2V
Zero gate voltage drain current Q1 I _DSS
V _DS=24 V, V _GS=0 V,
-
Q2
T _j=25 °C
-
-
1 µA
-
500
Q1
V _DS=24 V, V _GS=0 V,
-
-
0.1 mA
Q2
T _j=150 °C
-
3
-
Gate-source leakage current
Q1 I _GSS
V _GS=20 V, V _DS=0 V
-
Q2
-
100 nA
Drain-source on-state
resistance
Q1 R _{DS(on) V GS=4.5 V, I D=20 A}
-
5.4
7.0 mW
Q2
-
4.2
5.2
Q1
-
3.8
5.0
V _GS=10 V, I _D=20 A
Q2
-
2.8
3.7
Gate resistance
Q1 R _G
Q2
1.3
2.6
5.2 W
0.5
0.9
1.8
Transconductance
Q1 g _fs
|V _DS|>2|I _D|R _DS(on)max,
32
65
Q2
I _D=20 A
36
71
-S
-
Rev.2.0
page 2
2013-07-30