BSC082N10LSG Datasheet, PDF (7/10 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor

13 Avalanche characteristics
I _AS=f(t _AV); R _GS=25 Ω
parameter: T _j(start)
100
25 °C
100 °C
10
125 °C
14 Typ. gate charge
V _GS=f(Q _gate); I _D=25 A pulsed
parameter: V _DD
10
BSC082N10LS G
8
80 V
50 V
6
20 V
4
2
1
1
10
100
t _AV [µs]
15 Drain-source breakdown voltage
V _BR(DSS)=f(T _j); I _D=1 mA
110
105
0
1000
0
20
40
60
80
Q _gate [nC]
16 Gate charge waveforms
V _GS
Q_g
100
V _{g s(th)}
95
Q _g(th)
90
-60 -20
20
60 100 140 180
T _j [°C]
Q _gs
Rev. 1.07
page 7
Q _sw
Q _gd
Q _gate
2009-11-03