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BSC082N10LSG Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™2 Power-Transistor | |||
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BSC082N10LS G
OptiMOSâ¢2 Power-Transistor
Product Summary
Features
⢠N-channel, logic level
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Very low on-resistance R DS(on)
V DS
R DS(on),max
ID
100 V
8.2 mâ¦
100 A
⢠150 °C operating temperature
⢠Pb-free lead plating; RoHS compliant
⢠Qualified according to JEDEC1) for target application
PG-TDSON-8
⢠Ideal for high-frequency switching and synchronous rectification
⢠Halogen-free according to IEC61249-2-21
Type
BSC082N10LS G
Package
PG-TDSON-8
Marking
082N10LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=45 K/W2)
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
Gate source voltage
E AS
V GS
I D=50 A, R GS=25 â¦
Power dissipation
Operating and storage temperature
P tot
T C=25 °C
T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
Value
Unit
100
A
65
13.8
400
377
mJ
±20
V
156
W
-55 ... 150
°C
55/150/56
Rev. 1.07
page 1
2009-11-03
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