BSB024N03LXG Datasheet, PDF (7/11 Pages) Infineon Technologies AG – OptiMOS2 Power-MOSFET

13 Avalanche characteristics
I _AS=f(t _AV); R _GS=25 Ω
parameter: T _j(start)
100
125 °C
100 °C
25 °C
14 Typ. gate charge
V _GS=f(Q _gate); I _D=30 A pulsed
parameter: V _DD
12
BSB024N03LX G
15 V
6V
10
24 V
8
10
6
4
2
1
0
1
10
100
1000
0
t _AV [µs]
40
80
Q _gate [nC]
15 Drain-source breakdown voltage
V _BR(DSS)=f(T _j); I _D=1 mA
16 Gate charge waveforms
36
V _GS
34
32
30
28
V _{g s(th)}
26
Rev. 2.0
24
22
20
-60
-20
20
60 100 140 180
T _j [°C]
Q _g(th)
Q _gs
page 7
Q_g
Q _sw
Q _gd
Q _gate
2009-05-11