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BSB024N03LXG Datasheet, PDF (4/11 Pages) Infineon Technologies AG – OptiMOS2 Power-MOSFET
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1 Power dissipation
P tot=f(T C)
2 Drain current
I D=f(T C); V GS≥10 V
BSB024N03LX G
90
160
80
70
120
60
50
80
40
30
40
20
10
0
0
0
40
80
120
160
0
40
80
120
160
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
limited by on-state
resistance
1 µs
10 µs
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
101
102
100 µs
100
0.5
DC
1 ms
101
10 ms
100
0.2
0.1
10-1
0.05
0.02
10-2
0.01
single pulse
10-1
10-1
Rev. 2.0
100
101
V DS [V]
10-3
102
10-6
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2009-05-11
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