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BFR93AT Datasheet, PDF (7/7 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor
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BFR93AT
Power Gain Gma, Gms = f(VCE):_____
|S21|2 = f(VCE):---------
f = Parameter
18
IC=30mA
dB
0.9GHz
0.9GHz
14
12
1.8GHz
10
1.8GHz
8
6
4
2
00
3
6
V
12
VCE
Power Gain Gma, Gms = f(f)
Intermodulation Intercept Point IP3=f(IC)
 (3rd order, Output, ZS=ZL=50 )
VCE = Parameter, f = 900MHz
35
dBm
25
20
5V
4V
3V
2V
15
1V
100
10
20
30
40 mA
60
IC
Power Gain |S21|2= f(f)
VCE = Parameter
45
IC=30mA
dB
35
30
25
20
8V
5V
3V
15
2V
1V
10
5
00
1
2
3
4
5 GHz 7
f
VCE = Parameter
36
IC=30mA
dBm
24
18
8V
12
5V
3V
2V
6
1V
0
-60
1
2
3
4
5 GHz 7
f
7
Aug-09-2001