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BFR93AT Datasheet, PDF (3/7 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor
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BFR93AT
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
IC = 30 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
IC = 5 mA, VCE = 8 V, ZS = ZSopt ,
f = 900 MHz
f = 1.8 GHz
fT
4.5
6
- GHz
Ccb
- 0.58 0.9 pF
Cce
- 0.22 -
Ceb
-
1.7
-
F
dB
-
2
-
-
3.3
-
Power gain, maximum available 1)
IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
Gma
f = 1.8 GHz
- 15.5 -
-
10
-
Transducer gain
 IC = 30 mA, VCE = 8 V, ZS = ZL = 50 ,
f = 900 MHz
f = 1.8 GHz
|S21e|2
- 13.5 -
-
7.5
-
1Gma = |S21 / S12| (k-(k2-1)1/2)
3
Aug-09-2001
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