BFR92W Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA)

BFR92W
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
18
I_C=15mA
dB
0.9GHz
0.9GHz
14
12
1.8GHz
10
1.8GHz
8
6
4
2
00
2
4
6
8
10 ^V 13
V_CE
Power Gain G_ma, G_ms = f(f)
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz1)
25
dBm
5V
4V
3V
2V
15
1V
10
5
00
5
10
15
Power Gain |S₂₁|²= f(f)
20 ^mA
30
I_C
V_CE = Parameter
32
dB
I_C=15mA
26
22
18
14
10
10V
3V
6
1V
2
0.7V
-20 _{0.5 1 1.5 2 2.5 GHz 3.5}
f
V_CE = Parameter
28
I_C=15mA
dB
20
16
12
8
10V
4
2V
1V
0
0.7V
-40 _{0.5 1 1.5 2 2.5 GHz 3.5}
f
7
Aug-03-2001