BFR92W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA)

BFR92W
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
0.8
Transition frequency f_T = f (I_C)
V_CE = Parameter
6
GHz
pF
0.6
0.5
0.4
0.30
4
8
12
16 ^V
22
V_CB
5
10V
4.5
4
3V
3.5
3
2V
2.5
2
1.5
1V
1
0.7V
0.5
00
5 10 15 20 25 ^mA 35
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
18
dB
14
12
10
10V
5V
3V
2V
8
6
4
2
1V
0
-2
0.7V
-4
-60
5 10 15 20 25 ^mA 35
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
12
dB
8
10V
5V
3V
6
2V
4
2
0.7V
1V
0
-2
-4
-60
5 10 15 20 25 ^mA 35
I_C
6
Aug-03-2001