BFR340F Datasheet, PDF (7/8 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

Power Gain G_ma, G_ms = (f)
V_CE = parameter
45
dB
Ic=5mA
35
30
5V
3V
25
2V
1V
0.75V
20
15
10
50 _{0.5 1 1.5 2 2.5 3 GHz 4}
f
Power Gain G_ma, G_ms = (V_CE): 
|S₂₁|² = (V_CE): - - - -
f = parameter
22
dB ^{Ic = 5mA}
0.9GHz
20
19
0.9GHz
18
17
1.8GHz
16
15
1.8GHz
14
13
12
11
100
1
2
3 4 5 6^V
8
V_CE
BFR340F
Insertion Power Gain |S₂₁|² = (f)
V_CE = parameter
24
dB
Ic=5mA
20
18
16
14
12
10
5V
3V
2V
8
1V
0.75V
6
40 _{0.5 1 1.5 2 2.5 3 GHz 4}
f
Power gain G_ma, G_ms =  (I_C)
V_CE = 3V
f = parameter
24
dB
0.9GHz
20
18
1.8GHz
16
14
2.4GHz
12
3GHz
10
4GHz
8
6
40
2
4
6
8
10 ^mA
14
I_C
7
Jul-01-2003