BFR340F Datasheet, PDF (3/8 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFR340F
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
f_T
I_C = 6 mA, V_CE = 3 V, f = 1 GHz
Collector-base capacitance
C_cb
V_CB = 5 V, f = 1 MHz, emitter grounded
Collector emitter capacitance
C_ce
V_CE = 5 V, f = 1 MHz, base grounded
Emitter-base capacitance
C_eb
V_EB = 0.5 V, f = 1 MHz, collector grounded
Noise figure
I_C = 1 mA, V_CE = 3 V, Z_S = Z_Sopt ,
f = 1.8 GHz
F_min
11 14
-
- 0.21 0.4
- 0.17 -
- 0.11 -
- 1.15 -
Power gain, maximum stable¹⁾
I_C = 5 mA, V_CE = 3 V, Z_S = Z_Sopt ,
Z_L = Z_Lopt, f = 1.8 GHz
Power gain, maximum available¹⁾
I_C = 5 mA, V_CE = 3 V, Z_S = Z_Sopt ,
Z_L = Z_Lopt , f = 3 GHz
Transducer gain
I_C = 5 mA, V_CE = 3 V, Z_S = Z_L = 50 ,
f = 1.8 GHz
G_ms
-
16
-
G_ma
-
12
-
|S_21e|²
-
13
-
I_C = 5 mA, V_CE = 3 V, Z_S = Z_L = 50 ,
f = 3 GHz
-
9.5
-
Unit
GHz
pF
dB
-
dB
dB
Third order intercept point at output²⁾
V_CE = 3 V, I_C = 5 mA, f = 1.8 GHz,
Z_S = Z_L = 50
1dB Compression point at output
I_C = 5 mA, V_CE = 3 V, Z_S = Z_L = 50 ,
f = 1.8 GHz
IP₃
-
13
- dBm
P_-1dB
-
0
-
1_{Gma = |S21e / S12e| (k-(k²-1)}1/2_{), Gms = |S21e / S12e|}
2IP3 _{value depends on termination of all intermodulation frequency components.}

Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
3
Jul-01-2003