BFR193W Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

BFR193W
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
16
I_C=30mA
dB
0.9GHz
0.9GHz
12
1.8GHz
10
1.8GHz
8
6
4
2
0
0
2
4
6
8
10 V 13
V_CE
Power Gain G_ma, G_ms = f(f)
V_CE = Parameter
35
I_C=30mA
dB
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz
34
dBm
8V
30
5V
28
26
24
3V
22
20
2V
18
16
14
1V
12
0 10 20 30 40 50 60 mA 80
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
30
I_C=30mA
dB
25
20
20
15
15
10
10V
5
1V
0.7V
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
7
10
5
10V
1V
0
0.7V
-5
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Aug-09-2001