BFR193W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

BFR193W
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
1.6
pF
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
4
8
12
16 V 22
V_CB
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
8
8V
7
5V
6
3V
5
2V
4
3
1V
0.7V
2
1
0
0 10 20 30 40 50 60 70 mA 90
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
18
dB
16
15
10V
14
3V
13
12
2V
11
10
9
1V
8
7
6
0.7V
5
0 10 20 30 40 50 60 70 mA 90
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
10
10V
dB
3V
8
7
2V
6
5
4
1V
3
2
0.7V
1
0
0 10 20 30 40 50 60 70 mA 90
I_C
6
Aug-09-2001