BFR183T Datasheet, PDF (7/7 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFR183T
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
21
I_C=15mA
dB
0.9GHz
0.9GHz
15
1.8GHz
12
1.8GHz
9
6
3
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz
30
8V
dBm
5V
3V
20
2V
15
1V
10
5
00
3
6
V
12
V_CE
Power Gain G_ma, G_ms = f(f)
00 _{5 10 15 20 25 30 mA 40}
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
45
I_C=15mA
dB
35
30
25
20
15
10
10V
5V
5
1V
00
1
2
3
4
5 ^GHz 7
f
V_CE = Parameter
35
I_C=15mA
dBm
25
20
15
10
5
10V
0
5V
1V
-50
1
2
3
4
5 ^GHz 7
f
7
Aug-22-2001