BFR183T Datasheet, PDF (6/7 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFR183T
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
1
pF
0.6
0.4
0.2
00
5
10
15
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
22
V
25
V_CB
dB
16
13
10V
5V
3V
2V
10
1V
Transition frequency f_T = f (I_C)
V_CE = Parameter
9
GHz
7
6
5
10V
8V
5V
3V
4
2V
3
1V
2
0.7V
1
00 _{5 10 15 20 25 30 35 40 mA 50}
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
15
10V
dB
5V
3V
9
2V
6
1V
3
70 _{5 10 15 20 25 30 35 40 mA 50}
I_C
6
00 _{5 10 15 20 25 30 35 40 mA 50}
I_C
Aug-22-2001