BFR182W Datasheet, PDF (7/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

BFR182W
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
20
I_C=10mA
dB
0.9GHz
16
0.9GHz
14
1.8GHz
12
1.8GHZ
10
8
6
4
2
0
0
2
4
6
8
V
12
V_CE
Power Gain G_ma, G_ms = f(f)
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz
30
dBm
20
15
8V
5V
3V
2V
10
1V
5
0
0
5
10
15
20 mA
30
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
35
I_C=10mA
dB
V_CE = Parameter
30
I_C=10mA
dB
25
20
15
10
10V
1V
0.7V
5
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
7
20
15
10
10V
5
1V
0.7V
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Aug-09-2001