BFR182W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

BFR182W
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
0.8
pF
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
4
8
12
16 V 22
V_CB
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
20
dB
10V
3V
16
2V
14
12
1V
10
0.7V
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
8
7
6
5
4
3
2
1
0
0
5
10
10V
8V
5V
3V
2V
1V
0.7V
15
mA
25
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
14
dB
10V
3V
2V
10
8
1V
6
0.7V
4
2
8
0
4
8
12 16 20 mA 26
I_C
6
0
2
6
10
14
18 mA
26
I_C
Aug-09-2001