BFR182T Datasheet, PDF (7/7 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFR182T
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
22
dB ^IC^=10mA
0.9GHz
18
0.9GHz
16
1.8GHz
14
12
1.8GHz
10
8
6
4
2
00
3
6
V
12
V_CE
Power Gain G_ma, G_ms = f(f)
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz
30
dBm
8V
5V
20
3V
2V
15
10
1V
5
00
5
10
15
20 ^mA
30
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
45
I_C=10mA
dB
35
30
25
20
15
10
10V
5V
5
1V
00
1
2
3
4
5 ^GHz 7
f
V_CE = Parameter
30
I_C=10mA
dBm
20
15
10
5
10V
5V
0
1V
-50
1
2
3
4
5 ^GHz 7
f
7
Aug-09-2001