BFR182T Datasheet, PDF (6/7 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFR182T
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
0.6
pF
0.4
0.3
0.2
0.1
00
5
10
15
V
25
V_CB
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
22
dB
10V
5V
3V
16
2V
Transition frequency f_T = f (I_C)
V_CE = Parameter
9
GHz
10V
8V
7
5V
6
3V
5
2V
4
3
1V
2
0.7V
1
00
5
10
15
20 ^mA
30
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
15
10V
5V
dB
3V
2V
9
13
6
1V
1V
10
3
70 _{4 8 12 16 20 24 mA 32}
I_C
6
00
4
8 12 16 20 24 ^mA 32
I_C
Aug-09-2001