BFR106 Datasheet, PDF (7/7 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

BFR106
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
14
I_C=70mA
dB
0.9GHz
0.9GHz
10
8
1.8GHz
6
1.8GHz
4
2
0
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
V
12
V_CE
Intermodulation Intercept Point IP₃=f(I_C)

(3rd order, Output, Z_S=Z_L=50 )
V_CE = Parameter, f = 900MHz
36
dBm
8V
32
5V
30
28
3V
26
24
22
2V
20
18
16
1V
14
0 10 20 30 40 50 60 70 80 mA 100
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
45
I_C=70mA
dB
35
30
25
20
15
10
5
10V
1V
0
0.7V
-5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 GHz 4.0
f
V_CE = Parameter
40
I_C=70mA
dB
30
25
20
15
10
5
0
0.7V
1V
10V
-5
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
7
Jun-27-2001