BFR106 Datasheet, PDF (1/7 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

NPN Silicon RF Transistor

For low noise, high-gain amplifiers

For linear broadband amplifiers

Special application: antenna amplifiers

Complementary type: BFR194 (PNP)
BFR106
3
2
1 _VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
BFR106
R7s
1=B
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, T_S
73 °C ¹⁾
Junction temperature
Ambient temperature
Storage temperature
Pin Configuration
2=E
3=C
Package
SOT23
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
Value
Unit
15
V
20
20
3
100
mA
12
700
mW
150
°C
-65 ... 150
-65 ... 150
Thermal Resistance
Junction - soldering point²⁾
R_thJS

110
K/W
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
Jun-27-2001